RFHIC’s RTH18008S-30 is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 4G LTE systems, small cells, and metro cell base station applications. Covering 1805 to 1880 MHz, the RTH18008S-30 provides an output power of 8W with high efficiency of 45%. The RTH18008S-30 is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RTH18008S-30 is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 8W average power. The RTH18008S-30 is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.

This device is lead-free and RoHS compliant.