RFHIC’s RFDGK is a gallium-nitride (GaN) hybrid Power Amplifier designed ideally for 5G NR systems and 4G LTE systems. Covering 3480 to 3680 MHz, the RFDFE provides an output power of 9.1W with high efficiency of 47.1%. The RFDGK is packaged in a compact hybrid surface mount (SMD) on aluminum nitride (AIN) board for excellent thermal dissipation. The RFDGK is integrated with asymmetric Doherty configurations resulting in higher power-added efficiency for the entire module at 9.1W average power. The RFDGK is fully matched to 50 ohms with integrated DC blocking caps on both RF ports to simplify system integration. Custom designs are available upon request.

This device is lead-free and RoHS compliant.