RFHIC’s IE36110W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency of 65% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our RF12001KR3 ceramic package. The IE36110W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
Lead-free and RoHS compliant.