RFHIC’s RT12014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency of 60% at Psat, 2.6GHz. The device is a single-stage internally matched power amplifier transistor, packaged in our NS-CS01 ceramic package. The RT12014P can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
Lead-free and RoHS compliant.