RFHIC’s IE36170WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency of 47% at 45 dBm. The IE36170WD is a symmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide users with easier system integration. The device is internally matched and is ideally suited for WiMAX, LTE, and multi-carrier base station equipment.
Lead-free and RoHS compliant.