RFHIC’s IE26195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency of 75% at Psat. The IE26195WD is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for LTE, multi-carrier, and Doherty amplifier base station equipment applications.

Lead-free and RoHS compliant.