RFHIC’s IE18250D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency of 57% at 46.5dBm. The IE18250D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide higher efficiency and linearity. The device is internally matched and is suitable for muti-carrier, WiMAX, and Doherty amplifier base station applications.

Lead-free and RoHS compliant.