RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency of 58% at 47dBm. The IE27275D is an asymmetrical Doherty GaN HEMT designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for WiMAX, LTE and multi-carrier base station equipment applications.

Lead-free and RoHS compliant.