RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency of 57% at 48 dBm. The IE18330D is a symmetrical Doherty GaN HEMT designed to provide easier system integration and tuning. The device is internally matched and is suitable for Doherty amplifier, muti-band, and LTE base station applications.

Lead-free and RoHS compliant.