RFHIC’s IE18330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency of 57% at 48 dBm. The IE18330D is a symmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) designed to provide easier system integration and tuning. The device is internally matched and is suitable for Doherty amplifier, muti-band, and LTE base station applications.

Lead-free and RoHS compliant.