RFHIC’s AE367 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 50 to 3500 MHz, the AE367 provides 27 dBm of output power at P1dB with a gain of 15.5 dB. The AE367 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs.

This device is leadfree and RoHS compliant.