RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency of 68% at Psat. The device is a single-stage internally matched power amplifier transistor, packaged in our RF12002KR3 ceramic package. The IE36085W can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, LTE, and GSM systems.
Lead-free and RoHS compliant.