RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
AE514
StatusProduction
AE514
StatusProduction
Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
Applications
• Low Noise Amplifier for CATV
• Cable Modem
• FTTH (GPON, GEPON)
• fiber optical node
• Repeater
• RF SubSystems
• Base Station
• Converter
Frequency
30 ~ 1,000
MHz
Output Power
0.3
W
Flatness
1
dB
Gain
18
dB
Current
200
mA
Package
SOIC-8
Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
Applications
• Low Noise Amplifier for CATV
• Cable Modem
• FTTH (GPON, GEPON)
• fiber optical node
• Repeater
• RF SubSystems
• Base Station
• Converter
Frequency
30 ~ 1000MHz
Output Power
0.32W
Flatness
1dB
Gain
18dB
Current
200mA
Package
SOIC-8
Related products
-
Description
RFHIC’s AE608 is a gallium arsenide (GaAs) MESFET amplifier, designed for global mobile communication systems (GSM) and intermediate frequency (IF) amplifier applications. Operating from 10 to 4000 MHz, the AE608 provides 14 dBm of output power at P1dB with a gain of 14 dB and high OIP3 levels of 32 dBm. The AE608 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs.
This device is leadfree and RoHS compliant.
...Frequency10 ~ 4,000MHzOutput Power0.0WGain14dBStatusProduction
Freq. (MHz)10 ~ 4,000
Gain (dB)14 -
Description
RFHIC’s AE314 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2700 MHz, the AE314 provides a high gain of 21 dB with 36 dBm OIP3 and 2 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
...Frequency30 ~ 3,000MHzOutput Power0.1WGain23dBStatusProduction
Freq. (MHz)30 ~ 3,000
Gain (dB)23 -
Description
RFHIC’s AE379 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed ideally for RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE379 provides 33 dBm of output power at P1dB with a gain of 11.5 dB and high OIP3 levels of 43 dBm. The AE379 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs.
This device is leadfree and RoHS compliant.
...Frequency50 ~ 3,500MHzOutput Power0.2WGain12dBStatusProduction
Freq. (MHz)50 ~ 3,500
Gain (dB)12
