RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
AE514
StatusProduction
AE514
StatusProduction
Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
Applications
• Low Noise Amplifier for CATV
• Cable Modem
• FTTH (GPON, GEPON)
• fiber optical node
• Repeater
• RF SubSystems
• Base Station
• Converter
Frequency
30 ~ 1,000
MHz
Output Power
0.3
W
Flatness
1
dB
Gain
18
dB
Current
200
mA
Package
SOIC-8
Description
RFHIC’s AE514 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 30 to 2200 MHz, the AE514 provides a high gain of 18 dB with 40 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
Applications
• Low Noise Amplifier for CATV
• Cable Modem
• FTTH (GPON, GEPON)
• fiber optical node
• Repeater
• RF SubSystems
• Base Station
• Converter
Frequency
30 ~ 1000MHz
Output Power
0.32W
Flatness
1dB
Gain
18dB
Current
200mA
Package
SOIC-8
Related products
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Description
RFHIC’s AE368 is a gallium arsenide (GaAs) Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC), designed ideally for satellite systems, RFID, and femtocell applications. Operating from 50 to 3500 MHz, the AE368 provides 30 dBm of output power at P1dB with a gain of 13.7 dB and high OIP3 levels of 48 dBm. The AE368 is packaged in a plastic surface mount (SMD) resulting in lower manufacturing costs.
This device is leadfree and RoHS compliant.
...Frequency50 ~ 3,500MHzOutput Power1.1WGain14dBStatusProduction
Freq. (MHz)50 ~ 3,500
Gain (dB)14 -
Description
RFHIC’s AE607 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1500 MHz, the AE607 provides a high gain of 12.5 dB with 43 dBm OIP3 and 3.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
...Frequency5 ~ 1,500MHzOutput Power0.6WGain13dBStatusProduction
Freq. (MHz)5 ~ 1,500
Gain (dB)13 -
Description
RFHIC’s AE618 is a cost-efficient 75 Ohm GaAs Ephigh-electron-mobility (HEMT) monolithic microwave integrated ciruit (MMIC) low-noise amplifier designed for CATV and FTTH (GPON, GEPON) applications. Covering from 5 to 1300 MHz, the AE618 provides a high gain of 20 dB with 44 dBm OIP3 and 2.5 dB NF. This device is fabricated on Gallium Arsenide Enhancement Mode (GaAs Ephigh-electron-mobility (HEMT), providing lower current draw, noise, and higher linearity. Leadfree and RoHS compliant.
...Frequency30 ~ 1,000MHzOutput Power1.6WGain20dBStatusProduction
Freq. (MHz)30 ~ 1,000
Gain (dB)20
