RFHIC’s TG1000-10 is a gallium-nitride (GaN) hybrid power amplifier designed for Milcom and Electronic warfare systems applications. Covering from 100 to 1000 MHz, the TG1000-10 yields a high gain of 15 dB with 50 % efficiency at P3dB. The TG1000-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) and is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. Custom designs available upon request. Lead-free and RoHS compliant.