RFHIC’s RWP15020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a small signal gain of 29 dB with 43 dBm at P3dB. The RWP15020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.