RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP05020-10
StatusProduction
RWP05020-10
StatusProduction
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 1,000
MHz
Output Power
20
W
Gain
40
dB
OIP3
50
dBm
P3dB
43
dBm
Peak Power
20
W
Vdd
28
V
Idd
2,300
mA
Package
DP-75
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 1000MHz
Output Power
20W
Gain
40dB
OIP3
50dBm
P3dB
43dBm
Peak Power
20W
Vdd
28V
Idd
2300mA
Package
DP-75
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Description
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Lead-free and RoHS compliant.
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Freq. (MHz)2,000 ~ 6,000
Gain (dB)35 -
Description
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...Frequency500 ~ 1,000MHzOutput Power40.0WGain42dBStatusProduction
Freq. (MHz)500 ~ 1,000
Gain (dB)42 -
Description
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Freq. (MHz)20 ~ 512
Gain (dB)38
