RFHIC’s RWP03040-50 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a small signal gain of 39 dB with 46 dBm at P3dB. The RWP03040-50 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP03040-50
StatusProduction
RWP03040-50
StatusProduction
Description
RFHIC’s RWP03040-50 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a small signal gain of 39 dB with 46 dBm at P3dB. The RWP03040-50 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 500
MHz
Output Power
40
W
Gain
39
dB
P3dB
46
dBm
Peak Power
40
W
Vdd
28
V
Idd
4,000
mA
Package
DP-75
Description
RFHIC’s RWP03040-50 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03040-50 yields a small signal gain of 39 dB with 46 dBm at P3dB. The RWP03040-50 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 500MHz
Output Power
40W
Gain
39dB
P3dB
46dBm
Peak Power
40W
Vdd
28V
Idd
4000mA
Package
DP-75
Related products
-
Description
RFHIC’s RWP20050-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 3000 MHz, the RWP20050-10 yields a small signal gain of 38 dB with 47 dBm at Pin -9dBm. The RWP20050-10 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency1,000 ~ 3,000MHzOutput Power50.0WGain38dBStatusProduction
Freq. (MHz)1,000 ~ 3,000
Gain (dB)38 -
Description
RFHIC’s RWP17050-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP17050-10 yields a small signal gain of 37 dB with 47 dBm at Pin -10dBm. The RWP17050-10 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency700 ~ 2,700MHzOutput Power50.0WGain37dBStatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)37 -
Description
RFHIC’s RWP03060-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s GaN on SiC HEMT on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 512MHzOutput Power80.0WGain38dBStatusProduction
Freq. (MHz)20 ~ 512
Gain (dB)38
