RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
OIP3
53
dBm
P3dB
46
dBm
Peak Power
40
W
Dimension
63x38x14.4
mm
Vdd
28
V
Idd
3,500
mA
Description
RFHIC’s RWS02540-10 is a GaN on SiC wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s GaN on SiC HEMT to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
OIP3
53dBm
P3dB
46dBm
Peak Power
40W
Dimension
63x38x14.4mm
Vdd
28V
Idd
3500mA
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