RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
RWS02540-10
StatusProduction
RWS02540-10
StatusProduction
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512
MHz
Output Power
40
W
Gain
44
dB
Dimension
63x38x14.4
mm
Description
RFHIC’s RWS02540-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWS02540-10 yields a small signal gain of 44 dB with 46 dBm at P3dB. The RWS02540-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) to provide high breakdown voltage, power, and efficiency. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
20 ~ 512MHz
Output Power
40W
Gain
44dB
Dimension
63x38x14.4mm
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...Frequency20 ~ 1,000MHzOutput Power40.0WGain38dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)38 -
Description
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...Frequency1,000 ~ 3,000MHzOutput Power50.0WGain38dBStatusProduction
Freq. (MHz)1,000 ~ 3,000
Gain (dB)38 -
Description
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...
Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power25.0WGain21dBStatusProduction
Freq. (MHz)20 ~ 1,000
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