RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP05040-10
StatusProduction
RWP05040-10
StatusProduction
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1,000
MHz
Output Power
40
W
Gain
38
dB
Efficiency
-
%
Dimension
70 x 50.8 x 17.1
mm
Package
DP-75
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1000MHz
Output Power
40W
Gain
38dB
Efficiency
-%
Dimension
70 x 50.8 x 17.1mm
Package
DP-75
Related products
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Description
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...
Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power2.0WGain21dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)21 -
Description
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Lead-free and RoHS compliant.
...Frequency2,100 ~ 2,170MHzOutput Power56.0WGain33dBEfficiency%StatusProduction
Freq. (MHz)2,100 ~ 2,170
Gain (dB)33 -
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP03040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 520MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42
