RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP05040-10
StatusProduction
RWP05040-10
StatusProduction
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1,000
MHz
Output Power
40
W
Gain
38
dB
Efficiency
-
%
Dimension
70 x 50.8 x 17.1
mm
Package
DP-75
Description
RFHIC’s RWP05040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05040-10 yields a small signal gain of 38 dB with 46 dBm at P3dB. The RWP05040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 1000MHz
Output Power
40W
Gain
38dB
Efficiency
-%
Dimension
70 x 50.8 x 17.1mm
Package
DP-75
Related products
-
Description
RFHIC’s RFC1G21H4-24-S is a wideband amplifier module designed for drive amplifier applications. With a frequency range of 20 to 1000 MHz, the RFC1G21H4-24-S provides a broadband small-signal gain of 21 dB with 36 dBm P3dB. The RFC1G21H4-24-S is assembled with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) providing low distortion and high small-signal gain. The device is packaged on a copper gold plate heat sink to provide excellent thermal conductivity. The RFC1G21H4-24-S is equipped with a over-voltage suppressor and external circuit is not required.
...
Lead-free and RoHS compliant.Frequency20 ~ 1,000MHzOutput Power25.0WGain21dBStatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)21 -
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 1,000MHzOutput Power20.0WGain40dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)40 -
Description
RFHIC’s RWP03160-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 500 MHz, the RWP03160-10 yields a small signal gain of 43 dB with 54 dBm at OIP3. The RWP03160-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 500MHzOutput Power159.0WGain43dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43
