RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP03060-10
StatusProduction
RWP03060-10
StatusProduction
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512
MHz
Output Power
80
W
Gain
38
dB
Efficiency
-
%
Dimension
72x50.8x16.8
mm
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512MHz
Output Power
80W
Gain
38dB
Efficiency
-%
Dimension
72x50.8x16.8mm
Related products
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Description
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Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power40.0WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56 -
Description
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...Frequency2,000 ~ 3,000MHzOutput PowerWGain25dBEfficiency%StatusProduction
Freq. (MHz)2,000 ~ 3,000
Gain (dB)25 -
Description
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Gain (dB)43
