RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP03060-10
StatusProduction
RWP03060-10
StatusProduction
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512
MHz
Output Power
80
W
Gain
38
dB
Efficiency
-
%
Dimension
72x50.8x16.8
mm
Description
RFHIC’s RWP03060-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 512 MHz, the RWP03060-10 yields a small signal gain of 38 dB with 49dBm at Pin -11dBm. The RWP03060-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
Frequency
20 ~ 512MHz
Output Power
80W
Gain
38dB
Efficiency
-%
Dimension
72x50.8x16.8mm
Related products
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Description
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...Frequency20 ~ 1,000MHzOutput Power40.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 1,000
Gain (dB)38 -
Description
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Lead-free and RoHS compliant.
...
Custom designs are available upon request.Frequency2,000 ~ 6,000MHzOutput Power100.0WEfficiency22%StatusSample available
Freq. (MHz)2,000 ~ 6,000
Pout (W)100 -
Description
RFHIC’s RWP17050-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP17050-10 yields a small signal gain of 37 dB with 47 dBm at Pin -10dBm. The RWP17050-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency700 ~ 2,700MHzOutput Power50.0WGain37dBEfficiency%StatusProduction
Freq. (MHz)700 ~ 2,700
Gain (dB)37
