RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
RWS02520-10
StatusSample available
RWS02520-10
StatusSample available
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
Applications
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍMissile Tracking Radar
ㆍSurveillance Ground Radar
Frequency
20 ~ 512
MHz
Output Power
20
W
Gain
41
dB
Efficiency
-
%
Dimension
63x38x14.4
mm
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
Applications
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍMissile Tracking Radar
ㆍSurveillance Ground Radar
Frequency
20 ~ 512MHz
Output Power
20W
Gain
41dB
Efficiency
-%
Dimension
63x38x14.4mm
Related products
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Description
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...Frequency1,800 ~ 1,900MHzOutput Power56.0WGain33dBStatusProduction
Freq. (MHz)1,800 ~ 1,900
Gain (dB)33 -
Description
RFHIC’s RWP06040-60 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP06040-60 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 1,000MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)500 ~ 1,000
Gain (dB)42 -
Description
RFHIC’s RWP03040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 520 MHz, the RWP03040-10 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP03040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency20 ~ 520MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42
