RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
RWS02520-10
StatusSample available
RWS02520-10
StatusSample available
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
Applications
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍMissile Tracking Radar
ㆍSurveillance Ground Radar
Frequency
20 ~ 512
MHz
Output Power
20
W
Gain
41
dB
Efficiency
-
%
Dimension
63x38x14.4
mm
Description
RFHIC’s RWS02520-10 is a 41dB, 20-512 MHz, gallium-nitride (GaN) Wideband Amplifier designed for high frequency (HF), very high frequency (VHF), and ultra high frequency (UHF) communication systems.
Applications
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍMissile Tracking Radar
ㆍSurveillance Ground Radar
Frequency
20 ~ 512MHz
Output Power
20W
Gain
41dB
Efficiency
-%
Dimension
63x38x14.4mm
Related products
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Description
RFHIC’s RWP15020-50 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 1000 to 2000 MHz, the RWP15020-50 yields a small signal gain of 29 dB with 43 dBm at P3dB. The RWP15020-50 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency1,000 ~ 2,000MHzOutput PowerWGain29dBEfficiency%StatusProduction
Freq. (MHz)1,000 ~ 2,000
Gain (dB)29 -
Description
RFHIC’s RWP06040-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 450 to 880 MHz, the RWP06040-10 yields a small signal gain of 40 dB with 45 dBm at P3dB. The RWP06040-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency450 ~ 880MHzOutput Power32.0WGain40dBEfficiency%StatusProduction
Freq. (MHz)450 ~ 880
Gain (dB)40 -
Description
RFHIC’s RWP06040-60 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 500 to 1000 MHz, the RWP06040-60 yields a small signal gain of 42 dB with 46 dBm at P3dB. The RWP06040-60 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
...Frequency500 ~ 1,000MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)500 ~ 1,000
Gain (dB)42
