RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP15080-10
StatusProduction
RWP15080-10
StatusProduction
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
700 ~ 2,700
MHz
Output Power
100
W
Gain
53
dB
Efficiency
-
%
Dimension
134x105x30
mm
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
700 ~ 2700MHz
Output Power
100W
Gain
53dB
Efficiency
-%
Dimension
134x105x30mm
Related products
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Description
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...Frequency1,000 ~ 3,000MHzOutput Power50.0WGain38dBEfficiency%StatusProduction
Freq. (MHz)1,000 ~ 3,000
Gain (dB)38 -
Description
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...Frequency20 ~ 520MHzOutput Power40.0WGain42dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 520
Gain (dB)42 -
Description
RFHIC’s RWP05020-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 20 to 1000 MHz, the RWP05020-10 yields a small signal gain of 40 dB with 43 dBm at P3dB. The RWP05020-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
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Gain (dB)40
