RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
RWP15080-10
StatusProduction
RWP15080-10
StatusProduction
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
700 ~ 2,700
MHz
Output Power
100
W
Gain
53
dB
Efficiency
-
%
Dimension
134x105x30
mm
Description
RFHIC’s RWP15080-10 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for broadcasting and communication system applications. Covering from 700 to 2700 MHz, the RWP15080-10 yields a small signal gain of 53 dB with 50 dBm at Pin -3dBm. The RWP15080-10 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on aluminum sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration. Lead-free and RoHS compliant.
Applications
• Communication Systems
• Broadcasting Systems
• Laser drive amplifier
• Radio power amplifier
• Wideband Jammer
• Test Equipment
Frequency
700 ~ 2700MHz
Output Power
100W
Gain
53dB
Efficiency
-%
Dimension
134x105x30mm
Related products
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Description
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...Frequency20 ~ 500MHzOutput Power159.0WGain43dBEfficiency%StatusProduction
Freq. (MHz)20 ~ 500
Gain (dB)43 -
Description
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...Frequency450 ~ 880MHzOutput Power32.0WGain40dBEfficiency%StatusProduction
Freq. (MHz)450 ~ 880
Gain (dB)40 -
Description
RFHIC’s RUM15040-20 is a gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) wideband amplifier suited for communication and RF amplifier system applications. Covering from 500 to 2500 MHz, the RUM15040-20 yields a small signal gain of 56 dB with 46 dBm at P3dB peak. The RUM15040-20 is designed using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) on copper sub-carrier to provide high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched and includes thermal overload and input power over drive protection.
Lead-free and RoHS compliant.
...Frequency500 ~ 2,500MHzOutput Power40.0WGain56dBStatusProduction
Freq. (MHz)500 ~ 2,500
Gain (dB)56
