RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB with a 71% drain efficiency at 50V. The IE24100P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. The IE24100P is designed to replace current vacuum tubes like the magnetron, klystron, and or TWTA into RFHIC’s cutting edge gallium-nitride (GaN) solid-state technology. Custom designs are available upon request.

Lead-free and RoHS compliant.