RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high gain of 12.5dB with a 72% drain efficiency at 50V. The IE24150P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. The IE24150P is targeted to replace current vacuum tubes (magnetrons, klystrons, and TWTA) into gallium-nitride (GaN) solid-state technology. Custom designs are available upon request.
Lead-free and RoHS compliant.