RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high gain of 13.8dB with a 74% drain efficiency at 50V. The IE24200P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional vacuum tubes, the IE24200P utilizes RFHIC’s gallium-nitride (GaN) solid-state technology to provide longer lifetime, lower OPEX costs, and higher efficiency.

Lead-free and RoHS compliant.