RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high gain of 11.4dB with a 70% drain efficiency at 50V. The IE24300P is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional vacuum tubes, the IE24300P utilizes RFHIC’s gallium-nitride (GaN) solid-state technology for longer lifetime, lower OPEX costs, and higher efficiency. Custom designs are available upon request.
Lead-free and RoHS compliant.