RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high gain of 17.5dB with an 80% drain efficiency at 50V. The IE09300PC is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional silicon transistors, the IE09300PC is fabricated using RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology to provide users with higher efficiency, reliability, and excellent thermal stability. Custom designs are available upon request.

Lead-free and RoHS compliant.