RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a high gain of 15.2 dB with a 67% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. The ET43028P is fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology providing higher efficiency, reliability, and excellent thermal stability. Custom designs are available upon request.
Lead-free and RoHS compliant.