RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high gain of 13.9dB with a 71% drain efficiency at 50V. The device is capable of both continuous wave (CW) and pulse operations and can be customized upon request. Unlike traditional Si drive transistors, the ET43055P is fabricated with RFHIC’s gallium-nitride (GaN) on silicon carbide (SiC) technology providing higher efficiency, reliability, and excellent thermal stability. Custom designs are available upon request.
Lead-free and RoHS compliant.