RIM092K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
RIM092K0-20
StatusProduction
RIM092K0-20
StatusProduction
Description
RIM092K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930 MHz
Output Power
2,000 W
Return Loss
-15 dB
Bandwidth
30 MHz
Voltage
50 V
Efficiency
63 %
Input Power
4 dBm
Description
RIM092K0-20 using GaN-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
• High Power Industry
• Microwave CVD Reactor
• Plasma Generator
• Food Science
• MW Heating and Drying
Frequency
900 ~ 930MHz
Output Power
2000W
Return Loss
-15dB
Bandwidth
30MHz
Voltage
50V
Efficiency
63%
Input Power
4dBm
Related products
Description
RFHIC’s RRP9095150-18 is a 150 W GaN module amplifier designed for radar systems applications. Operating from 9000 to 9500 MHz, the RRP9095150-18 achieves 18 dB of gain with an efficiency of 35%. The RRP9095150-18 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency9,000 ~ 9,500MHzOutput Power150WGain18dBEfficiency35%StatusSample available
Freq. (MHz)9,000 ~ 9,500
Gain (dB)18Description
RFHIC’s RRP291K0-10 is a 1100 W GaN module amplifier designed for radar systems applications. Operating from 2700 to 3100 MHz, the RRP291K0-10 achieves 60.5 dB of gain with an efficiency of 35%. The RRP291K0-10 utilizes our in-house GaN on SiC technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency2,700 ~ 3,100MHzOutput Power1,100WGain61dBEfficiency35%StatusProduction Freq. (MHz)2,700 ~ 3,100
Gain (dB)61Description
RFHIC’s RNP24150-20 is a 150 W, GaN solid-state power amplifier (SSPA) which operates from 2400~2500 MHz. It has a drain efficiency of 60% and is capable of both CW and pulsed operations. The RNP24150-20 is equipped with RFHIC’s GaN on SiC HEMT, providing higher efficiency, reliability, and linearity. The device is fully matched to 50-Ohms with integrated DC blocking capacitors on both RF ports to simplify system integration. The RNP24150-20 is ideal for microwave chemical vapor deposition (CVD) reactors, plasma generators, and industrial heating systems.
Custom designs are available upon request.Lead-free and RoHS compliant.
...Frequency2,400 ~ 2,500MHzOutput Power150WGain52dBEfficiency60%StatusSample available Freq. (MHz)2,400 ~ 2,500
Gain (dB)52
