RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
RIM092K0-20
StatusProduction
RIM092K0-20
StatusProduction
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
ㆍNavigation Radar
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍThreat Detection Radar
ㆍMissile Tracking Radar
ㆍMeteorological Radar
ㆍSurveillance Ground Radar
Frequency
900 ~ 930
MHz
Output Power
2,000
W
Return Loss
-15
dB
Bandwidth
30
MHz
Efficiency
63
%
Input Power
4
dBm
Description
RIM092K0-20 using gallium-nitride (GaN)-on-SiC transistors is designed for industrial, scientific, medical (ISM) and plasma applications at 915MHz. RIM092K0-20 is the world’s highest power and efficiency SSPA with affordable price. This amplifier is suitable for use in CW, ISM applications. This high efficiency rugged device is targeted to replace industrial magnetrons and other vacuum tubes which are currently applying into high power industrial applications, artificial diamond manufacturing, semiconductor equipment, and plasma systems.
Applications
ㆍNavigation Radar
ㆍSpace Exploration Radar
ㆍAir Traffic Control Radar
ㆍWeather Radar
ㆍThreat Detection Radar
ㆍMissile Tracking Radar
ㆍMeteorological Radar
ㆍSurveillance Ground Radar
Frequency
900 ~ 930MHz
Output Power
2000W
Return Loss
-15dB
Bandwidth
30MHz
Efficiency
63%
Input Power
4dBm
Related products
-
Description
RFHIC’s RRP56571K0-42 is a 1200 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5600 to 5700 MHz, the RRP56571K0-42 achieves 42 dB of gain with an efficiency of 35%. The RRP56571K0-42 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,600 ~ 5,700MHzOutput Power1,200.0WGain42dBEfficiency35%StatusSample available
Freq. (MHz)5,600 ~ 5,700
Gain (dB)42 -
Description
RFHIC’s RRP5257550-35 is a 630 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 5250 to 5750 MHz, the RRP5257550-35 achieves 35 dB of gain with an efficiency of 30%. The RRP5257550-35 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency5,250 ~ 5,750MHzOutput Power630.0WGain35dBEfficiency30%StatusObsolete
Freq. (MHz)5,250 ~ 5,750
Gain (dB)35 -
Description
RFHIC’s RRP9095150-18 is a 150 W gallium-nitride (GaN) module amplifier designed for radar systems applications. Operating from 9000 to 9500 MHz, the RRP9095150-18 achieves 18 dB of gain with an efficiency of 35%. The RRP9095150-18 utilizes our in-house gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology, resulting in higher breakdown voltage, wider bandwidth, and higher efficiency. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Customizable products are available upon request.
Lead-free and RoHS compliant.
...Frequency9,000 ~ 9,500MHzOutput Power150.0WGain18dBEfficiency35%StatusSample available
Freq. (MHz)9,000 ~ 9,500
Gain (dB)18
