RFHIC’s HS5867-20A is a GaN Hybrid power amplifier designed with RFHIC’s GaN on SiC HEMT to provide higher efficiency and breakdown voltage. The HS5867-20A operates from 5800 to 6700 MHz and provides 44.5 dBm of Pout at P4dB with 45% efficiency. The HS5867-20A is available in a low-cost, hybrid surface mount (SMD) package and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration. The device is ideally suited for point-to-point radio applications and is lead-free and RoHS compliant.