RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges – only available
RFHIC’s leading-edge GaN on SiC transistors are solving the power challenges of today’s most demanding industries. It’s unbeatable compact size, high- efficiency, power and wide frequency ranges – only available from RFHIC.
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Description
RFHIC’s ID19601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1930 to 1995 MHz. The ID19601D delivers 600 W of saturated power at ...
Frequency1,930 ~ 1,995MHzOutput Power81.3WGain16dBEfficiency48%StatusSample availableFreq. (MHz)1,930 ~ 1,995
Gain (dB)16 -
Description
RFHIC’s ID22601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2200 MHz. The ID22601D delivers 530 W of saturated power at ...
Frequency2,110 ~ 2,200MHzOutput Power75.9WGain15dBEfficiency47%StatusSample availableFreq. (MHz)2,110 ~ 2,200
Gain (dB)15 -
Description
RFHIC’s ID26601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The ID26601D delivers 600 W of saturated power at ...
Frequency2,620 ~ 2,690MHzOutput Power84.5WGain15dBEfficiency47%StatusSample availableFreq. (MHz)2,620 ~ 2,690
Gain (dB)15 -
Description
RFHIC’s ID38601D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 3980 MHz. The ID38601D delivers 600 W of saturated power at ...
Frequency3,700 ~ 3,980MHzOutput Power81.2WGain14dBEfficiency42%StatusSample availableFreq. (MHz)3,700 ~ 3,980
Gain (dB)14 -
Description
RFHIC’s ID39084W is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 4100 MHz. The ID39084W delivers 84 W of saturated power at 48V ...
Frequency3,700 ~ 4,100MHzOutput Power3.0WGain18dBEfficiency64%StatusSample availableFreq. (MHz)3,700 ~ 4,100
Gain (dB)18 -
Description
RFHIC’s ID46531D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 4500 to 4600 MHz. The ID46531D delivers 510 W of saturated power at ...
Frequency4,500 ~ 4,600MHzOutput Power70.8WGain13dBEfficiency42%StatusSample availableFreq. (MHz)4,500 ~ 4,600
Gain (dB)13 -
Description
RFHIC’s ID36461D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 3600 MHz. The ID36461D delivers 460 W of saturated power at 48V.
The ...
Frequency3,400 ~ 3,600MHzOutput Power56.2WGain14dBEfficiency47%StatusSample availableFreq. (MHz)3,400 ~ 3,600
Gain (dB)14 -
Description
RFHIC’s ID49531D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 4800 to 5000 MHz. The ID49531D delivers 490 W of saturated power at ...
Frequency4,800 ~ 5,000MHzOutput Power56.2WGain14dBEfficiency43%StatusSample availableFreq. (MHz)4,800 ~ 5,000
Gain (dB)14 -
Description
RFHIC’s ID38461DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 3980 MHz. The ID38461DR delivers 447 W of saturated power at 48V.
The ...
Frequency3,700 ~ 3,980MHzOutput Power56.2WGain15dBEfficiency45%StatusSample availableFreq. (MHz)3,700 ~ 3,980
Gain (dB)15 -
Description
RFHIC’s ID37461D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3400 to 3700 MHz. The ID37461D delivers 460 W of saturated power at ...
Frequency3,400 ~ 3,700MHzOutput Power56.0WGain15dBEfficiency46%StatusSample availableFreq. (MHz)3,400 ~ 3,700
Gain (dB)15 -
Description
RFHIC’s ID18411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1800 to 1880 MHz. The ID18411D delivers 410 W of saturated power at ...
Frequency1,800 ~ 1,880MHzOutput Power56.2WGain18dBEfficiency54%StatusSample availableFreq. (MHz)1,800 ~ 1,880
Gain (dB)18 -
Description
RFHIC’s ID19411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1995 to 2020 MHz. The ID19411D delivers 410 W of saturated power at ...
Frequency1,995 ~ 2,020MHzOutput Power55.0WGain18dBEfficiency50%StatusSample availableFreq. (MHz)1,995 ~ 2,020
Gain (dB)18 -
Description
RFHIC’s ID20411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 1930 to 2200 MHz.
The ID20411D is an asymmetrical Doherty gallium-nitride (GaN) high-electron-mobility (HEMT) ...
Frequency1,930 ~ 2,200MHzOutput Power56.2WGain16dBEfficiency48%StatusSample availableFreq. (MHz)1,930 ~ 2,200
Gain (dB)16 -
Description
RFHIC’s ID22411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2200 MHz. The ID22411D delivers 410 W of saturated power at ...
Frequency2,110 ~ 2,200MHzOutput Power53.7WGain18dBEfficiency52%StatusSample availableFreq. (MHz)2,110 ~ 2,200
Gain (dB)18 -
Description
RFHIC’s ID26411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2570 to 2620 MHz. The ID26411D delivers 410 W of saturated power at ...
Frequency2,570 ~ 2,620MHzOutput Power58.9WGain15dBEfficiency51%StatusSample availableFreq. (MHz)2,570 ~ 2,620
Gain (dB)15 -
Description
RFHIC’s ID36411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3500 to 3600 MHz. The ID36411D delivers 410 W of saturated power at ...
Frequency3,500 ~ 3,600MHzOutput Power52.5WGain15dBEfficiency48%StatusSample availableFreq. (MHz)3,500 ~ 3,600
Gain (dB)15 -
Description
RFHIC’s ID37411D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3600 to 3800 MHz. The ID37411D delivers 410 W of saturated power at ...
Frequency3,600 ~ 3,800MHzOutput Power56.2WGain14dBEfficiency47%StatusSample availableFreq. (MHz)3,600 ~ 3,800
Gain (dB)14 -
Description
RFHIC’s ID38411DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 4000 MHz. The ID38411DR delivers 410 W of saturated power at ...
Frequency3,700 ~ 4,000MHzOutput Power56.2WGain14dBEfficiency46%StatusSample availableFreq. (MHz)3,700 ~ 4,000
Gain (dB)14 -
Description
RFHIC’s ID41411DR is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3700 to 4100 MHz. The ID41411DR delivers 410 W of saturated power at ...
Frequency3,700 ~ 4,100MHzOutput Power56.2WGain14dBEfficiency46%StatusSample availableFreq. (MHz)3,700 ~ 4,100
Gain (dB)14 -
Description
RFHIC’s ETQ2014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2014P delivers 14 W of saturated power at 48V ...
Frequency0 ~ 6,000MHzOutput Power3.2WGain19dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Pout (W)3
Gain (dB)19 -
Description
RFHIC’s DT12060P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The DT12060P delivers 60 W of saturated power at 48V ...
Frequency0 ~ 6,000MHzOutput Power14.1WGain17dBEfficiency70%StatusProduction
Freq. (MHz)0 ~ 6,000
Pout (W)14
Gain (dB)17 -
Description
The 580W CW RF Power Transistor is designed for particle accelerator and microwave energy applications at 500MHz. This device is suitable for use in CW, pulse and linear applications. This ...
Frequency499 ~ 501MHzOutput Power580.0WEfficiency75%StatusSample available
Freq. (MHz)499 ~ 501 -
Description
RFHIC’s IE24300P is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...
Frequency2,400 ~ 2,500MHzOutput Power300.0WGain11dBStatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)11 -
Description
RFHIC’s IE24150P is a 150W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the ...
Frequency2,400 ~ 2,500MHzOutput Power150.0WGain13dBStatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)13 -
Description
RFHIC’s IE24200P is a 200W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the ...
Frequency2,400 ~ 2,500MHzOutput Power200.0WStatusProduction
Freq. (MHz)2,400 ~ 2,500 -
Description
RFHIC’s IE13550D is a 550W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the ...
Frequency1,295 ~ 1,305MHzOutput Power550.0WGain15dBStatusSample available
Freq. (MHz)1,295 ~ 1,305
Gain (dB)15 -
Description
RFHIC’s IE24100P is a 100W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor fabricated with RFHIC’s gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) technology. Operating from 2400 to 2500 MHz, ...
Frequency2,400 ~ 2,500MHzOutput Power100.0WGain15dBStatusProduction
Freq. (MHz)2,400 ~ 2,500
Gain (dB)15 -
Description
RFHIC’s IE09150PC is a 150W continuous-wave gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an ...
Frequency900 ~ 930MHzOutput Power150.0WGain18dBStatusProduction
Freq. (MHz)900 ~ 930
Gain (dB)18 -
Description
RFHIC’s IE09300PC is a 300W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) transistor ideally suited for microwave heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the ...
Frequency900 ~ 930MHzOutput Power300.0WGain18dBStatusProduction
Freq. (MHz)900 ~ 930
Gain (dB)18 -
Description
RFHIC’s ET43028P is a 34W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, ...
Frequency0 ~ 6,000MHzOutput Power34.0WGain15dBStatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)15 -
Description
RFHIC’s ET43055P is a 70W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ...
Frequency0 ~ 6,000MHzOutput Power70.0WGain13dBStatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)13 -
Description
RFHIC’s ET43014P is an 18W gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) drive transistor designed ideally for microwave heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, ...
Frequency0 ~ 6,000MHzOutput Power18.0WGain16dBStatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)16 -
Description
RFHIC’s RT12014P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at ...
Frequency0 ~ 6,000MHzOutput Power3.2WGain18dBEfficiency60%StatusProductionFreq. (MHz)0 ~ 6,000
Gain (dB)18 -
Description
RFHIC’s IE36170WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at ...
Frequency3,520 ~ 3,560MHzOutput Power32.0WGain15dBStatusProductionFreq. (MHz)3,520 ~ 3,560
Gain (dB)15 -
Description
RFHIC’s IE27385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at ...
Frequency2,620 ~ 2,690MHzOutput Power69.0WGain14dBStatusProduction
Freq. (MHz)2,620 ~ 2,690
Gain (dB)14 -
Description
RFHIC’s IE27330D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at ...
Frequency2,620 ~ 2,690MHzOutput Power63.0WGain14dBEfficiency54%StatusProduction
Freq. (MHz)2,620 ~ 2,690
Gain (dB)14 -
Description
RFHIC’s IE27275D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at ...
Frequency2,575 ~ 2,635MHzOutput Power50.0WGain14dBStatusProductionFreq. (MHz)2,575 ~ 2,635
Gain (dB)14 -
Description
RFHIC’s IE27220PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at ...
Frequency2,620 ~ 2,690MHzOutput Power50.0WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17 -
Description
RFHIC’s IE27165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at ...
Frequency2,620 ~ 2,690MHzOutput Power40.0WGain17dBEfficiency75%StatusProductionFreq. (MHz)2,620 ~ 2,690
Gain (dB)17 -
Description
RFHIC’s ETQ2028P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V ...
Frequency0 ~ 6,000MHzOutput Power6.3WGain19dBEfficiency60%StatusProduction
Freq. (MHz)0 ~ 6,000
Gain (dB)19 -
Description
RFHIC’s IE26195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at ...
Frequency2,575 ~ 2,635MHzOutput Power32.0WGain14dBEfficiency75%StatusProduction
Freq. (MHz)2,575 ~ 2,635
Gain (dB)14 -
Description
RFHIC’s IE26085P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at ...
Frequency2,496 ~ 2,690MHzOutput Power19.0WGain20dBEfficiency70%StatusProduction
Freq. (MHz)2,496 ~ 2,690
Gain (dB)20 -
Description
RFHIC’s IE21385D is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at ...
Frequency2,110 ~ 2,170MHzOutput Power63.0WGain15dBEfficiency55%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)15 -
Description
RFHIC’s IE23195WD is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at ...
Frequency2,300 ~ 2,400MHzOutput Power40.0WGain15dBEfficiency72%StatusProduction
Freq. (MHz)2,300 ~ 2,400
Gain (dB)15 -
Description
RFHIC’s IE21330P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at ...
Frequency2,110 ~ 2,170MHzOutput Power79.0WGain16dBEfficiency75%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)16 -
Description
RFHIC’s IE21220P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at ...
Frequency2,110 ~ 2,170MHzOutput Power50.0WGain17dBEfficiency75%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)17 -
Description
RFHIC’s IE21165PE is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at ...
Frequency2,110 ~ 2,170MHzOutput Power37.0WGain18dBEfficiency72%StatusProductionFreq. (MHz)2,110 ~ 2,170
Gain (dB)18 -
Description
RFHIC’s IE21110P is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at ...
Frequency2,110 ~ 2,170MHzOutput Power25.0WGain18dBEfficiency74%StatusProduction
Freq. (MHz)2,110 ~ 2,170
Gain (dB)18
