RF Power Transistors

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions,

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions,

RFHIC offers a broad portfolio of gallium nitride (GaN) on silicon carbide (SiC) discrete transistors in various power levels, frequency ranges, and voltages. We offer both standardized and custom solutions, packaged in our highest quality ceramic packages. Our world renowned GaN transistors provide users with unbeatable performance all built by our industry leading reliability.

  • IE24300P

    GaN on SiC Transistors

    IE24300P

    Description

    RFHIC’s IE24300P is a 300W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24300P provides a high ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    300W
    Gain
    11dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)11
  • IE24150P

    GaN on SiC Transistors

    IE24150P

    Description

    RFHIC’s IE24150P is a 150W GaN on SiC transistor designed ideally for industrial heating, scientific, and medical (ISM) applications. Operating from 2400 to 2500 MHz, the IE24150P provides a high ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    150W
    Gain
    13dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)13
  • IE24200P

    GaN on SiC Transistors

    IE24200P

    Description

    RFHIC’s IE24200P is a 200W GaN on SiC transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operating from 2400 to 2500 MHz, the IE24200P provides a high ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    200W
    Gain
    131dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)131
  • IE13550D

    GaN on SiC Transistors

    IE13550D

    Description

    RFHIC’s IE13550D is a 550W GaN on SiC transistor designed ideally for particle accelerators (LINAC) and microwave energy applications. Operating from 1295 to 1305 MHz, the IE13550D provides a high ...

    Frequency
    1,295 ~ 1,305MHz
    Output Power
    550W
    Gain
    15dB
    Efficiency
    79%
    StatusSample available
    Freq. (MHz)1,295 ~ 1,305
    Gain (dB)15
  • IE24100P

    GaN on SiC Transistors

    IE24100P

    Description

    RFHIC’s IE24100P is a 100W GaN on SiC transistor fabricated with RFHIC’s GaN on SiC technology. Operating from 2400 to 2500 MHz, the IE24100P provides a high gain of 14.6dB ...

    Frequency
    2,400 ~ 2,500MHz
    Output Power
    100W
    Gain
    15dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)2,400 ~ 2,500
    Gain (dB)15
  • IE09150PC

    GaN on SiC Transistors

    IE09150PC

    Description

    RFHIC’s IE09150PC is a 150W continuous-wave GaN on SiC transistor. Operating from 900 to 930 MHz, the IE09150PC provides a high gain of 17.6dB with an 82.5% drain efficiency at ...

    Frequency
    900 ~ 930MHz
    Output Power
    150W
    Gain
    18dB
    Efficiency
    83%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • IE09300PC

    GaN on SiC Transistors

    IE09300PC

    Description

    RFHIC’s IE09300PC is a 300W GaN on SiC transistor ideally suited for industrial heating, drying, and plasma lighting applications. Operating from 900 to 930 MHz, the IE09300PC provides a high ...

    Frequency
    900 ~ 930MHz
    Output Power
    300W
    Gain
    18dB
    Efficiency
    80%
    StatusProduction
    Freq. (MHz)900 ~ 930
    Gain (dB)18
  • ET43028P

    GaN on SiC Transistors

    ET43028P

    Description

    RFHIC’s ET43028P is a 28W GaN on SiC drive transistor designed ideally for industrial heating, drying, and plasma lighting applications. Operable within DC to 6000 MHz, the ET43028P provides a ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    28W
    Gain
    15dB
    Efficiency
    67%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)15
  • ET43055P

    GaN on SiC Transistors

    ET43055P

    Description

    RFHIC’s ET43055P is a 55W GaN on SiC drive transistor designed ideally for industrial, scientific, and medical (ISM) applications. Operable from DC to 6000 MHz, the ET43055P provides a high ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    55W
    Gain
    13dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)13
  • ET43014P

    GaN on SiC Transistors

    ET43014P

    Description

    RFHIC’s ET43014P is a 14W GaN on SiC drive transistor designed ideally for industrial heating/drying, medical and plasma lighting applications. Operable within DC to 6000 MHz, the ET43014P provides a ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    14W
    Gain
    16dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • RT12014P

    GaN on SiC Transistors

    RT12014P

    Description

    RFHIC’s RT12014P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12014P delivers 14 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    3W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE36170WD

    GaN on SiC Transistors

    IE36170WD

    Description

    RFHIC’s IE36170WD is a discrete GaN on SiC HEMT which operates from 3520 to 3560 MHz. The IE36170WD delivers 170 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,520 ~ 3,560MHz
    Output Power
    32W
    Gain
    15dB
    StatusProduction
    Freq. (MHz)3,520 ~ 3,560
    Gain (dB)15
  • IE27385D

    GaN on SiC Transistors

    IE27385D

    Description

    RFHIC’s IE27385D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27385D delivers 389 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    69W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27330D

    GaN on SiC Transistors

    IE27330D

    Description

    RFHIC’s IE27330D is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    63W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)14
  • IE27275D

    GaN on SiC Transistors

    IE27275D

    Description

    RFHIC’s IE27275D is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE27275D delivers 275 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    50W
    Gain
    14dB
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE27220PE

    GaN on SiC Transistors

    IE27220PE

    Description

    RFHIC’s IE27220PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27220PE delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    50W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • IE27165PE

    GaN on SiC Transistors

    IE27165PE

    Description

    RFHIC’s IE27165PE is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    40W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)17
  • ETQ2028P

    GaN on SiC Transistors

    ETQ2028P

    Description

    RFHIC’s ETQ2028P is a discrete GaN on SiC HEMT which operates up to 6000 MHz. The ETQ2028P delivers 28 W of saturated power at 48V with a drain efficiency of ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6W
    Gain
    19dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)19
  • IE26195WD

    GaN on SiC Transistors

    IE26195WD

    Description

    RFHIC’s IE26195WD is a discrete GaN on SiC HEMT which operates from 2575 to 2635 MHz. The IE26195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,575 ~ 2,635MHz
    Output Power
    32W
    Gain
    14dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,575 ~ 2,635
    Gain (dB)14
  • IE26085P

    GaN on SiC Transistors

    IE26085P

    Description

    RFHIC’s IE26085P is a discrete GaN on SiC HEMT which operates from 2496 to 2690 MHz. The IE26085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,496 ~ 2,690MHz
    Output Power
    19W
    Gain
    20dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,496 ~ 2,690
    Gain (dB)20
  • IE21385D

    GaN on SiC Transistors

    IE21385D

    Description

    RFHIC’s IE21385D is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    63W
    Gain
    15dB
    Efficiency
    55%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)15
  • IE23195WD

    GaN on SiC Transistors

    IE23195WD

    Description

    RFHIC’s IE23195WD is a discrete GaN on SiC HEMT which operates from 2300 to 2400 MHz. The IE23195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,300 ~ 2,400MHz
    Output Power
    40W
    Gain
    15dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,300 ~ 2,400
    Gain (dB)15
  • IE21330P

    GaN on SiC Transistors

    IE21330P

    Description

    RFHIC’s IE21330P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    79W
    Gain
    16dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)16
  • IE21220P

    GaN on SiC Transistors

    IE21220P

    Description

    RFHIC’s IE21220P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    50W
    Gain
    17dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)17
  • IE21165PE

    GaN on SiC Transistors

    IE21165PE

    Description

    RFHIC’s IE21165PE is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21165PE delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    37W
    Gain
    18dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE21110P

    GaN on SiC Transistors

    IE21110P

    Description

    RFHIC’s IE21110P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    25W
    Gain
    18dB
    Efficiency
    74%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)18
  • IE18250D

    GaN on SiC Transistors

    IE18250D

    Description

    RFHIC’s IE18250D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18250D delivers 250 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    45W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)17
  • IE18220PG

    GaN on SiC Transistors

    IE18220PG

    Description

    RFHIC’s IE18220PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18220PG delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    50W
    Gain
    18dB
    Efficiency
    71%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE19195WD

    GaN on SiC Transistors

    IE19195WD

    Description

    RFHIC’s IE19195WD is a discrete GaN on SiC HEMT which operates from 1880 to 2025 MHz. The IE19195WD delivers 195 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,880 ~ 2,025MHz
    Output Power
    32W
    Gain
    17dB
    StatusProduction
    Freq. (MHz)1,880 ~ 2,025
    Gain (dB)17
  • IE18330D

    GaN on SiC Transistors

    IE18330D

    Description

    RFHIC’s IE18330D is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330D delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    63W
    Gain
    16dB
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18330PG

    GaN on SiC Transistors

    IE18330PG

    Description

    RFHIC’s IE18330PG is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18330PG delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    74W
    Gain
    16dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)16
  • IE18165P

    GaN on SiC Transistors

    IE18165P

    Description

    RFHIC’s IE18165P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    37W
    Gain
    18dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)18
  • IE18085P

    GaN on SiC Transistors

    IE18085P

    Description

    RFHIC’s IE18085P is a discrete GaN on SiC HEMT which operates from 1805 to 1880 MHz. The IE18085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    1,805 ~ 1,880MHz
    Output Power
    19W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)1,805 ~ 1,880
    Gain (dB)19
  • IE08220P

    GaN on SiC Transistors

    IE08220P

    Description

    RFHIC’s IE08220P is a discrete GaN on SiC HEMT which operates from 758 to 858 MHz. The IE08220P delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    758 ~ 858MHz
    Output Power
    50W
    Gain
    22dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)758 ~ 858
    Gain (dB)22
  • IE36085W

    GaN on SiC Transistors

    IE36085W

    Description

    RFHIC’s IE36085W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36085W delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    19W
    Gain
    17dB
    Efficiency
    68%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
  • IE27330P

    GaN on SiC Transistors

    IE27330P

    Description

    RFHIC’s IE27330P is a discrete GaN on SiC HEMT which operates from 2620 to 2690 MHz. The IE27330P delivers 330 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,620 ~ 2,690MHz
    Output Power
    79W
    Gain
    15dB
    Efficiency
    70%
    StatusProduction
    Freq. (MHz)2,620 ~ 2,690
    Gain (dB)15
  • IE26110P

    GaN on SiC Transistors

    IE26110P

    Description

    RFHIC’s IE26110P is a discrete GaN on SiC HEMT which operates from 2500 to 2690 MHz. The IE26110P delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,500 ~ 2,690MHz
    Output Power
    25W
    Gain
    19dB
    Efficiency
    72%
    StatusProduction
    Freq. (MHz)2,500 ~ 2,690
    Gain (dB)19
  • IE21085P

    GaN on SiC Transistors

    IE21085P

    Description

    RFHIC’s IE21085P is a discrete GaN on SiC HEMT which operates from 2110 to 2170 MHz. The IE21085P delivers 85 W of saturated power at 48V with a drain efficiency ...

    Frequency
    2,110 ~ 2,170MHz
    Output Power
    19W
    Gain
    21dB
    Efficiency
    75%
    StatusProduction
    Freq. (MHz)2,110 ~ 2,170
    Gain (dB)21
  • IE36220W

    GaN on SiC Transistors

    IE36220W

    Description

    RFHIC’s IE36220W is a discrete GaN on SiC HEMT which operates from 3480 to 3520 MHz. The IE36220W delivers 220 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,480 ~ 3,520MHz
    Output Power
    50W
    Gain
    15dB
    Efficiency
    64%
    StatusProduction
    Freq. (MHz)3,480 ~ 3,520
    Gain (dB)15
  • RT12055P

    GaN on SiC Transistors

    RT12055P

    Description

    RFHIC’s RT12055P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12055P delivers 55 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    13W
    Gain
    16dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)16
  • RT12028P

    GaN on SiC Transistors

    RT12028P

    Description

    RFHIC’s RT12028P is a discrete GaN on SiC HEMT which operates from 0 to 6000 MHz. The RT12028P delivers 28 W of saturated power at 48V with a drain efficiency ...

    Frequency
    0 ~ 6,000MHz
    Output Power
    6W
    Gain
    18dB
    Efficiency
    60%
    StatusProduction
    Freq. (MHz)0 ~ 6,000
    Gain (dB)18
  • IE08165P

    GaN on SiC Transistors

    IE08165P

    Description

    RFHIC’s IE08165P is a discrete GaN on SiC HEMT which operates from 770 to 900 MHz. The IE08165P delivers 165 W of saturated power at 48V with a drain efficiency ...

    Frequency
    770 ~ 900MHz
    Output Power
    37W
    Gain
    21dB
    Efficiency
    77%
    StatusProduction
    Freq. (MHz)770 ~ 900
    Gain (dB)21
  • IE36110W

    GaN on SiC Transistors

    IE36110W

    Description

    RFHIC’s IE36110W is a discrete GaN on SiC HEMT which operates from 3400 to 3600 MHz. The IE36110W delivers 110 W of saturated power at 48V with a drain efficiency ...

    Frequency
    3,400 ~ 3,600MHz
    Output Power
    25W
    Gain
    17dB
    Efficiency
    65%
    StatusProduction
    Freq. (MHz)3,400 ~ 3,600
    Gain (dB)17
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