Anyang, South Korea, January 30, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, today unveiled a 410 W GaN on SiC transistor designed for 5G base station applications. The ID38410DR built on RFHIC’s GaN on SiC technology, the 410 W transistor provides 13.5 dB of large signal gain, 56.2 dBm of average power and an industry-leading power-added efficiency of 43.6%. The transistor is packaged in a compact ceramic package, which reduces size, weight and the number of external components required to create this powerful solution for 5G base station applications.
The ID38410DR is available now to qualified customers.
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RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
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