Boston, US, June 19, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave components for communications and defense applications, showcased the World’s first GaN on Diamond transistor at the 2019 International Microwave Symposium held in Boston today.

GaN is a wide bandgap semiconductor material that provides key features such as higher breakdown electric fields and electron drift velocities than conventional semiconductors like Si and GaAs.  When combined with SiC substrates, it exhibits enhanced thermal characteristics, sustaining higher temperatures, which then enables more efficient semiconductor components. Even with GaN on SiC’s high-performance properties, there still are physical limitations within high power applications. Leading RFHIC to develop a new compound semiconductor material- GaN on Diamond, which is expected to revolutionize the high power RF & MW industry.

RFHIC Corporation purchased GaN on Diamond IP from E6 – a part of the Debeer’s group back in 2017 and has developed the World’s First Commercialized GaN on Diamond transistor for Defense, MILCOM, RF Energy, and Communication applications. Diamond is known for its desirable material properties allowing 5x better thermal conductivity, 2x power density, and frequencies attainable up to 100GHz.  With these key features, it can be used for various high power applications like radar, 5G macrocells, and high power industrial/scientific/medical systems.

“Once we go to scale with our GaN on Diamond transistors, we plan on penetrating the high power defense and ISM market as well as the high power 5G wireless market. We hope to become the leading pioneers of high power RF & MW components worldwide, said Samuel Cho, CTO, and Founder of RFHIC Corporation.”

Reporter Lee, Jung Eun nvcess@fnnews.com
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About RFHIC
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.  RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia.  RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.

Media Contacts:
Grace Cho
Grace.cho@rfhic.com