Anyang, South Korea, April 10, 2018 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, today released its latest 6kW, 2.45 GHz, GaN solid-state microwave generator (RIU256K0-40T) designed for plasma generation, CVD reactor, and MW heating and drying applications. The RIU256K0-40T provides a high continuous output power of 6kW with a 54% efficiency. The device is equipped with its own power supply unit and uses water cooling system. The RIU256K0-40T head is packaged in a standard 19” shelf, simplifying system integration. The microwave generator is fabricated using RFHIC’s cutting edge GaN on SiC transistors enabling the frequency, amplitude, phase width and modulation to all be accurately controlled using a feedback loop.
The RIU256K0-40T provides numerous performance advantages over traditional magnetrons, including longer lifetime, enhanced reliability, precise power level, and energy direction control, and smaller sizes. RFHIC is leading the wave towards transitioning over to GaN solid-state.
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
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