Anyang, South Korea, January 17, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in GaN RF & MW solutions featured in Microwave Journal’s January issue.
RFHIC is the World’s First and Only GaN Device (GaN SiC transistor & Power Amplifier) to Sub-System manufacturer, providing customers with fast and high-quality Commerical Off the Shelf (COTS) and customizable product solutions for communications infrastructure, defense, commercial radar, and high power Industrial, Scientific, and Medical (ISM) applications. With our One-Stop-GaN solution business model, we can provide our customers with Fast and Reliable products at Lower Costs, excellent In-house aftercare customer service, and a broad product portfolio to tailor to your exact needs.
Samuel Cho, Co-Founder, and CTO of RFHIC said GaN solid-state technology would enable us to embark upon a new generation of discovery and innovation that was once impossible. The time has come to transition over to GaN solid-state technology, which will allow us to overcome system design constraints while saving high costs.”
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RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next significant change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea. RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.