Anyang, South Korea, May 21, 2020 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released its latest GaN wideband power amplifier series ideally designed for electronic warfare and jamming applications. Providing unmatched dynamic performance and range for next-generation EW applications. RFHIC’s latest RWP-Series is operable at 2 GHz to 6 GHz, fully matched with power levels up to 200W. The solid-state power amplifiers (SSPA) are fabricated with RFHIC’s cutting edge GaN on SiC HEMT providing industry-leading size, weight, and cost (SWaP-C).
RFHIC is capable of providing custom design solutions at the modular and system-level providing up to multi-kW of power.
To learn more, visit our website or contact one of our sales representatives today at email@example.com.
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea.
RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.