Anyang, South Korea, January 9, 2019 – RFHIC Corporation (KOSDAQ:218410), a global leader in designing and manufacturing GaN RF & Microwave solutions, released today its latest 35W, X-band GaN MMIC (GM09010035D) designed for Radar, EW, and Jammer applications. The 2-stage monolithic GaN HEMT amplifier operates at 9-10 GHz and is fully matched to 50 Ohms with integrated DC blocking capacitors on both RF ports. The GM09010035D provides 22.5 dB of small signal gain, 45.5 dBm of saturated output power, and 40% of efficiency. This highly compact and powerful device can be the game-changer for weather radar, marine radar, point to point, and multipoint radios.
RFHIC Corporation provides innovative GaN solutions that transform how the world operates, communicates, and protects. Our cutting edge GaN technology is the core foundation of all our inventions for creating a better, faster, and more efficient world. As a global leader in designing and manufacturing GaN RF & Microwave components, we envision spurring a new era of high-powered and reliable devices for the next big change in industrial, cellular, and defense technology. Headquartered in Anyang, South Korea. RFHIC has a US sales office in Morrisville, North Carolina, and sales distributors throughout North America, Europe, and Asia. RFHIC is an ISO9001 (International quality standard) and ISO14001 (Environmental management standard) certified company, providing reliable and dependable products worldwide.
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