RWP25020-50

설명

RFHIC’s RWP25020-50 is a gallium-nitride on silicon carbide (GaN-on-SiC), S-band, wideband amplifier suited for broadcasting and communication system applications. Covering from 2000 to 3000 MHz, the RWP25020-50 yields a small signal gain of 25 dB with 44 dBm at P3dB peak. The RWP25020-50 is designed using RFHIC’s GaN-on-SiC on silicon carbide high-electron-mobility transistors (HEMT), providing high breakdown voltage, efficiency, and lower thermal dissipation. The device is fully matched for easier system integration.