통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
ID24330WD
설명
RFHIC’s ID24330WD is a gallium nitride (GaN) on silicon carbide (SiC) transistor designed ideally for plasma lighting, RF microwave heating, and microwave drying applications. The ID24330WD has a saturated power of 347W at 48V and a peak power of 55.4dBm at 2.4GHz. The ID24330WD operates from 2300 to 2500 MHz and is internally matched, simplifying system integration.
View Product Specification
Plasma Lighting Systems
Microwave Heating & Drying
Solid-State Microwave Ovens
Semiconductor Equipment
Bio & Health Sciences
제품 사양
| Min Freq.(MHz) | 2300MHz |
|---|---|
| Max Freq.(MHz) | 2500MHz |
| Output Power(W) | 347W |
| Power Gain(dB) | 13.5dB |
| Drain Efficiency(%) | 47.2% |
| VDC(V) | 48 |
| Package Type | Flange |
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