ID36461D

GaN 트랜지스터 – 통신
Production

설명

RFHIC’s ID36461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates up to 3600 MHz.The ID36461D delivers 460 W of saturated power at 48V. It can be used in Doherty architecture for the final stage of a base station power amplifier for WiMAX, 5G NR, and GSM systems.

View Product Specification
WiMAX, 5G NR, WCDMA
GSM, Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 3400MHz
Max Freq.(MHz) 3600MHz
Typ Output Power(W) 56.2W
Saturation Power(W) 460W
Power Gain(dB) 14.4dB
VDC(V) 48
Package RF24008DKR3
Package Type Flange
Drain Efficiency(%) 46%