Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 ID22411D

ID22411D

GaN 트랜지스터 – 통신
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설명

RFHIC’s ID22411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2200 MHz. The ID22411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.

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WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 2110MHz
Max Freq.(MHz) 2200MHz
Typ Output Power(W) 54W
Saturation Power(W) 410W
Power Gain(dB) 17.5dB
VDC(V) 48
Package RF24008DKR3
Package Type Flange
Drain Efficiency(%) 50%

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