통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
ID19411D
설명
RFHIC’s ID19411D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 1995 to 2020 MHz.The ID19411D delivers 410 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE, and 5G NR systems.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier
제품 사양
| Min Freq.(MHz) | 1995MHz |
|---|---|
| Max Freq.(MHz) | 2020MHz |
| Typ Output Power(W) | 55W |
| Saturation Power(W) | 410W |
| Power Gain(dB) | 17.7dB |
| VDC(V) | 48 |
| Package | RF24008DKR3 |
| Package Type | Flange |
| Drain Efficiency(%) | 49% |
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