통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
IE21385D
설명
RFHIC’s IE21385D is a discrete gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility (HEMT) operable from 2110 to 2170 MHz. The IE21385D delivers 385 W of saturated power at 48V with a drain efficiency of 56% at 48 dBm.The IE21385D is designed to provide high efficiency and linearity. The device is internally matched and is ideally suited for multi-band, LTE, and WiMAX base station applications.
View Product Specification
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier
제품 사양
| Min Freq.(MHz) | 2110MHz |
|---|---|
| Max Freq.(MHz) | 2170MHz |
| Typ Output Power(W) | 63W |
| Saturation Power(W) | 385W |
| Power Gain(dB) | 15dB |
| Efficiency | 56% |
| VDC(V) | 48 |
| Package | RF24001DKR3 |
| Package Type | Flange |
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