TG520-10

설명

RFHIC’s TG520-10 is a gallium-nitride (GaN) hybrid power amplifier for defense communications and electronic warfare system applications. Covering from 30 to 520 MHz, the TG520-10 yields a high gain of 16 dB with 60 % efficiency at P3dB. The TG520-10 is designed using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT). It is packaged in a hybrid surface mount (SMD) and attached to a copper sub-carrier. The device is connected via bias and is fully matched to 50-Ohms with DC blocking capacitors on both RF ports for simple system integration.