Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 H029C12A

H029C12A

GaN 트랜지스터 – 통신
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설명

RFHIC’s H029C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 2300 to 2400 MHz.The H029C12A delivers 302 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.(MHz) 2300MHz
Max Freq.(MHz) 2400MHz
Typ Output Power(W) 48W
Saturation Power(W) 302W
Power Gain(dB) 13.5dB
Efficiency 48%
VDC(V) 48
Package RF18010DKR3
Package Type Flange

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