Home Products RF 트랜지스터 GaN 트랜지스터 – 통신 H009C12A

H009C12A

GaN 트랜지스터 – 통신
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설명

RFHIC’s H009C12A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1800 to 2200 MHz.The H009C12A delivers 398 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.

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Datasheet
WiMAX, LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency Doherty Amplifier

제품 사양

Min Freq.(MHz) 1800MHz
Max Freq.(MHz) 2200MHz
Typ Output Power(W) 79W
Saturation Power(W) 398W
Power Gain(dB) 14.7dB
Efficiency 52%
VDC(V) 48
Package RF24010DKR3
Package Type Flange

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