통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s H004 is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 0 to 6000 MHz.The H004 delivers 28 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product Specification| Max Freq.(MHz) | 6000MHz |
|---|---|
| Typ Output Power(W) | 6.3W |
| Saturation Power(W) | 28W |
| Power Gain(dB) | 18.7dB |
| Efficiency | 32% |
| VDC(V) | 48 |
| Package | DFN66726L-Q2 |
| Package Type | Surface Mount |