통신
RFHIC의 질화갈륨 (GaN) 기술을 통해 차세대
무선통신 인프라 시장을 이끌고 있습니다.
무선통신 인프라 시장을 이끌고 있습니다.
RFHIC’s H001C11A is a discrete gallium-nitride gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) which operates from 1880 to 2025 MHz.The H001C11A delivers 195 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is ideally suited for WiMAX, LTE, WCDMA and GSM systems.
View Product Specification| Min Freq.(MHz) | 1880MHz |
|---|---|
| Max Freq.(MHz) | 2025MHz |
| Typ Output Power(W) | 32W |
| Saturation Power(W) | 195W |
| Power Gain(dB) | 16.9dB |
| Efficiency | 48% |
| VDC(V) | 48 |
| Package | RF12001DKR3-PK2 |
| Package Type | Flange |