ID22461D

GaN 트랜지스터 – 통신
Sample Available for purchase

설명

RFHIC’s ID22461D is a discrete gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor (HEMT) which operates from 2110 to 2170 MHz.The ID22461D delivers 460 W of saturated power at 48V and is designed to provide higher efficiency and linearity. The device is internally matched and is ideally suited for 4G LTE systems.

View Product Specification
WiMAX, 4G LTE, WCDMA, GSM
Multi-Band, Multi-Mode
Multi-Carrier
High Efficiency, Doherty Amplifier

제품 사양

Min Freq.(MHz) 2110MHz
Max Freq.(MHz) 2170MHz
Typ Output Power(W) 56.2W
Saturation Power(W) 460W
Power Gain(dB) 17dB
Efficiency 58%
VDC(V) 48
Package RF24008DKR3
Package Type Flange